:
Jaewook Jeong, Joonwoo Kim, Donghyun Kim, Heonsu Jeon, Soon Moon Jeong, and Yongtaek Hong
:
AIP Adv. 6, 085311(2016)
In this study, we demonstrate a mobility enhancement structure for fully transparent
amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs)
by embedding a holographically generated periodic nano-conductor in the backchannel
regions. The intrinsic field-effect mobility was enhanced up to 2 times
compared to that of a reference sample. The enhancement originated from a decrease
in the effective channel length due to the highly conductive nano-conductor region.
By combining conventional and holographic lithography, the performance
of the a-IGZO TFT can be effectively improved without varying the composition
of the channel layer. |
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